1) In BJT, the forward biased base emitter junction inject holes from base to emitter, the holes
a. Do not contribute to the collector current
b. Result in net current flow component into the base
c. Contribute to the collector current
d. Only (a) and (b)
e. Only (b) and (c)
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Answer
Explanation
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ANSWER: Only (a) and (b)
Explanation:
No explanation is available for this question!
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2) The on - state voltage drop of IGBT consists of
a. Drop across the collector junction
b. Drop across the drift region
c. Drop across MOSFET portion
d. All of these
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Answer
Explanation
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ANSWER: All of these
Explanation:
No explanation is available for this question!
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3) The conduction losses in IGBT is
a. More than that of MOSFET
b. Lower than that of MOSFET
c. Equal to that of MOSFET
d. Equal to that of BJT
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Answer
Explanation
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ANSWER: Lower than that of MOSFET
Explanation:
No explanation is available for this question!
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4) The power MOSFET device is a
a. Current controlled unipolar device
b. Voltage controlled unipolar device
c. Current controlled bipolar device
d. Voltage controlled bipolar device
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Answer
Explanation
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ANSWER: Voltage controlled unipolar device
Explanation:
No explanation is available for this question!
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5) MOSFET stands for
a. Metal - oxide semiconductor field effect transistor
b. Molybdenum - oxide semiconductor field effect transistor
c. Metal - oxide silicon field effect transistor
d. Metal - oxide semiconductor field effect transmitter
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Answer
Explanation
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ANSWER: Metal - oxide semiconductor field effect transistor
Explanation:
No explanation is available for this question!
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6) A MOSFET, for its conduction uses
a. Only minority carriers
b. Only majority carriers
c. Both minority and majority carriers
d. None of these
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Answer
Explanation
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ANSWER: Only majority carriers
Explanation:
No explanation is available for this question!
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7) An RC snubber network used in BJT
a. Divert the collector current during turn - off
b. Improves the reverse bias safe operating area
c. Dissipates a fair amount of switching power
d. All of these
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Answer
Explanation
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ANSWER: All of these
Explanation:
No explanation is available for this question!
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8) The IGBT resulted in higher switching speed and lower energy losses. It can be used for
a. Uninterruptible power supplies
b. Induction heating system
c. Constant voltage and frequency power supplies
d. All of these
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Answer
Explanation
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ANSWER: All of these
Explanation:
No explanation is available for this question!
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9) To detect an over - current fault condition, the most reliable method is to connect a
a. Current sensor across IGBT
b. Voltage sensor across IGBT
c. Current sensor in series with IGBT
d. Voltage sensor in series with IGBT
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Answer
Explanation
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ANSWER: Current sensor in series with IGBT
Explanation:
No explanation is available for this question!
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10) In BJT, switching losses occurs
a. Only at turn - on
b. Only at turn - off
c. Both at turn on and off
d. None of these
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Answer
Explanation
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ANSWER: Both at turn on and off
Explanation:
No explanation is available for this question!
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